Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films

Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/{\mu}m^2 to 1.29 CNTs/{\mu}m^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By developing a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 {\mu}m) and resolution (< 5 {\mu}m) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations

Co-production of synfuels and electricity from coal + biomass with zero net carbon emissions: An Illinois case study

Abstract Energy, carbon, and economic performance are estimated for facilities co-producing Fischer–Tropsch Liquid (FTL) fuels and electricity from a co-feed of biomass and coal in Illinois, with capture and storage of by-product CO 2 . The estimates include detailed models of supply systems for corn stover or mixed prairie grasses and of feedstock conversion facilities. The Illinois results are extrapolated to estimate the potential FTL production in 23 states

Nanoscale Equilibrium Crystal Shapes

The finite size and interface effects on equilibrium crystal shape (ECS) have been investigated for the case of a surface free energy density including step stiffness and inverse-square step-step interactions. Explicitly including the curvature of a crystallite leads to an extra boundary condition in the solution of the crystal shape, yielding a family of crystal shapes, governed by a shape parameter c. The total crystallite free energy, including interface energy, is minimized for c=0, yielding in all cases the traditional PT shape (z x3/2). Solutions of the crystal shape for c&#8800;0 are presented and discussed in the context of meta-stable states due to the energy barrier for nucleation. Explicit scaled relationships for the ECS and meta-stable states in terms of the measurable step parameters and the interfacial energy are presented.Comment: 35 page

Diffusive Charge Transport in Graphene on SiO2

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime.Comment: 28 pages, 7 figures, submitted to Graphene Week proceeding

Pentacene islands grown on ultra-thin SiO2

Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1.Comment: 15 pages, 4 figure

Electromigration-Induced Flow of Islands and Voids on the Cu(001) Surface

Electromigration-induced flow of islands and voids on the Cu(001) surface is studied at the atomic scale. The basic drift mechanisms are identified using a complete set of energy barriers for adatom hopping on the Cu(001) surface, combined with kinetic Monte Carlo simulations. The energy barriers are calculated by the embedded atom method, and parameterized using a simple model. The dependence of the flow on the temperature, the size of the clusters, and the strength of the applied field is obtained. For both islands and voids it is found that edge diffusion is the dominant mass-transport mechanism. The rate limiting steps are identified. For both islands and voids they involve detachment of atoms from corners into the adjacent edge. The energy barriers for these moves are found to be in good agreement with the activation energy for island/void drift obtained from Arrhenius analysis of the simulation results. The relevance of the results to other FCC(001) metal surfaces and their experimental implications are discussed.Comment: 9 pages, 13 ps figure

A Review of the fossil record of turtles of the clade Baenidae

The fossil record of the turtle clade Baenidae ranges from the Early Cretaceous (Aptian—Albian) to the Eocene. The group is present throughout North America during the Early Cretaceous, but is restricted to the western portions of the continents in the Late Cretaceous and Paleogene. No credible remains of the clade have been reported outside of North America to date. Baenids were warmadapted freshwater aquatic turtles that supported high levels of diversity at times through niche partitioning, particularly by adapting to a broad range of dietary preferences ranging from omnivorous to molluscivorous. Current phylogenies place Baenidae near the split of crown-group Testudines. Within Baenidae three more inclusive, named clades are recognized: Baenodda, Palatobaeninae and Eubaeninae. A taxonomic review of the group concludes that of 49 named taxa, 30 are nomina valida, 12 are nomina invalida and 7 are nomina dubia

Propagation and Structure of Planar Streamer Fronts

Streamers often constitute the first stage of dielectric breakdown in strong electric fields: a nonlinear ionization wave transforms a non-ionized medium into a weakly ionized nonequilibrium plasma. New understanding of this old phenomenon can be gained through modern concepts of (interfacial) pattern formation. As a first step towards an effective interface description, we determine the front width, solve the selection problem for planar fronts and calculate their properties. Our results are in good agreement with many features of recent three-dimensional numerical simulations. In the present long paper, you find the physics of the model and the interfacial approach further explained. As a first ingredient of this approach, we here analyze planar fronts, their profile and velocity. We encounter a selection problem, recall some knowledge about such problems and apply it to planar streamer fronts. We make analytical predictions on the selected front profile and velocity and confirm them numerically. (abbreviated abstract)Comment: 23 pages, revtex, 14 ps file